Publicaciones - 2014

About the Origin of Low Wafer Performance and Crystal Defect Generation on Seed-cast Growth of Industrial Mono-like Silicon Ingots; I. Guerrero, V. Parra, T. Carballo, A. Black, M. Miranda, D. Cancillo, B. Moralejo, J. Jiménez, J. F. Lelièvre, C. del Cañizo; Progress in Photovoltaics 22(8), 923-932.

Studies of defects in heteroepitaxial InP on Si grown by nano-epitaxial lateral overgrowth (NELOG); C. Junesand, M.H. Gau, Y.T Sun, S. Lourdudoss, J. Jiménez, P.A. Postigo, F.M. Morales, J. Hernández, S. Molina, A. Abdessamad; Materials Express 4(1), 41-53.

Raman spectrum of Si nanowires: temperature and phonon confinement effects; J. Anaya, A. Torres, A.C. Prieto, V. Hortelano, J. Jiménez, A. Rodríguez, T. Rodríguez; Appl. Phys. A 114(4), 1321-1331.

Epitaxial growth of (0001) oriented porous GaN layers by chemical vapour deposition; O. Bilousov, J.J. Carvajal, J. Mena, O. Martínez, J. Jiménez, H. Geaney, F. Díaz, M. Aguiló, C. O’Dwyer; Cryst. Eng. Commun. 16(44), 10255-10261.

Fully porous GaN p-n junction diodes fabricated by chemical vapor deposition; O. Bilousov, J.J. Carvajal, H. Geaney, V. Zubialevich, P. Parbrook, O. Martínez, J. Jiménez, F. Díaz, M. Aguiló, C. O’Dwyer; ACS Applied Materials & Interfaces 6(20), 17954-17964.

Raman study of multicrystalline silicon wafers produced by the RST process; A. Tejero, E. Tupin, M.A. González, O. Martínez, J. Jiménez, C. Belouet, C. Baillis; Acta Physica Polonica A. 125(4), 1006-1009.

Structural and optical characterization of nanostructured ZnO grown on alumina templates; M. Yuste, R. Escobar, O. Martínez, I. Mínguez Bacho, S. Rodríguez, M. Hernández Vélez, O. Sánchez; Materials Research Express 1(4), 045028.

Analysis of the reduction of tensile stress by post-growth annealing methods in multicrystalline silicon wafers produced by the RST process; O. Martínez, A. Tejero, E. Tupin, M.A. González, J. Jiménez, C. Belouet, C. Baillis; Physica Status Solidi Current Topics in Solid State Physics 11(11-12), 1640-1643.
