Defects formation during chlorine-based dry etching and their effects on the electronic and structural properties of InP/InAsP quantum wells; Jean-Pierre Landesman, Juan Jiménez, Christophe Levallois, Frédéric Pommereau, Cesare Frigeri, Alfredo Torres, Yoan Léger, Alexandre Beck, Ahmed Rhallabi; J. Vac. Sci. Technol. A 34, 041304.
https://doi.org/10.1116/1.4950445