Mechanical stress in InP and GaAs ridges formed by reactive ion etching; Jean-Pierre Landesman, Marc Fouchier, Erwine Pargon, Solène Gerard, Névine Rochat, Christophe Levallois, Merwan Mokhtari, Philippe Pagnod-Rossiaux, François Laruelle, Camille Petit-Etienne, Mauro Bettiati, Juan Jiménez, Daniel T. Cassidy; J. Appl. Phys. 128, 225705.
https://doi.org/10.1063/5.0032838