About the Origin of Low Wafer Performance and Crystal Defect Generation on Seed-cast Growth of Industrial Mono-like Silicon Ingots; I. Guerrero, V. Parra, T. Carballo, A. Black, M. Miranda, D. Cancillo, B. Moralejo, J. Jiménez, J. F. Lelièvre, C. del Cañizo; Progress in Photovoltaics.
Studies of defects in heteroepitaxial InP on Si grown by nano-epitaxial lateral overgrowth (NELOG); Carl Junesand, Ming-Horn Gau, Yan-Ting Sun, Sebastian Lourdudoss, Juan Jiménez, Pablo Aitor Postigo, Francisco Miguel Morales Sánchez, Jesús Hernández, Sergio Molina, Aouni Abdessamad; Materials Express, 4, 41.
Raman spectrum of Si nanowires: temperature and phonon confinement effects; J. Anaya, A. Torres, A.C. Prieto, V. Hortelano, J. Jiménez, A. Rodríguez, T. Rodríguez; Appl. Phys. A 114, 1321-1331.
Electron density gradients in ammonothermally-grown GaN; N. Domènech-Amador, R. Cuscó, J. Jiménez, L. Artús; Appl. Physics Express 7, 021001.
Epitaxial growth of (0001) oriented porous GaN layers by chemical vapour deposition; O. Bilousov, J.J. Carvajal, J. Mena, O. Martínez, J. Jiménez, H. Geaney, F. Díaz, M. Aguiló, C. O’Dwyer; Cryst. Eng. Commun. 16, 10255-10261.
Fully porous GaN p-n junction diodes fabricated by chemical vapor deposition; O. Bilousov, J.J. Carvajal, H. Geaney, V. Zubialevich, P. Parbrook, O. Martínez, J. Jiménez, F. Díaz, M. Aguiló, C. O’Dwyer; ACS Applied Materials & Interfaces 6, 17954-17964.
Raman study of multicrystalline silicon wafers produced by the RST process; A. Tejero, E. Tupin, M.A. González, O. Martínez, J. Jiménez, C. Belouet, C. Baillis; Acta Physica Polonica A. 125, 1006–1009.
Residual strain and electrically activity of defects in multicrystalline silicon solar cells; O. Martínez, J. Mass, A. Tejero, B. Moralejo, V. Hortelano, M.A. González, J. Jiménez, V. Parra; Acta Physica Polonica A 125, 1013–1016.
